გამოსახულება | Ნაწილი ნომერი | აღწერა | საფონდო | იყიდე |
---|---|---|---|---|
MW6IC2240NBR1Freescale Semiconductor, Inc. (NXP Semiconductors) |
NARROW BAND HIGH POWER AMPLIFIER |
Საწყობში: 2.828 |
||
BGA420E6433IR (Infineon Technologies) |
RF/MICROWAVE AMPLIFIER, 1 FUNC |
Საწყობში: 416.666 |
||
MAX2668EYT+Linear Technology (Analog Devices, Inc.) |
LOW-NOISE AMPLIFIER |
Საწყობში: 120.481 |
||
MAX2644EXTLinear Technology (Analog Devices, Inc.) |
SIGE LOW-NOISE AMPLIFIERS |
Საწყობში: 43.137 |
||
MAX2265EUELinear Technology (Analog Devices, Inc.) |
CEL-BAND LINEAR POWER AMPLIFIER |
Საწყობში: 20.900 |
||
BGA6289,135NXP Semiconductors |
WIDE BAND LOW POWER AMPLIFIER |
Საწყობში: 107.526 |
||
BGA614E6327IR (Infineon Technologies) |
WIDE BAND LOW POWER AMPLIFIER |
Საწყობში: 208.333 |
||
BGU8006115NXP Semiconductors |
IC AMP RF LNA FOR GNSS 6WLCSP |
Საწყობში: 344.827 |
||
MD7IC2250NR1Freescale Semiconductor, Inc. (NXP Semiconductors) |
RF AND BASEBAND CIRCUIT, PDFM14 |
Საწყობში: 2.160 |
||
MAX2645EUBLinear Technology (Analog Devices, Inc.) |
LOW-NOISE AMPLIFIER/PA PREDRIVER |
Საწყობში: 98.214 |
||
BGA8U1BN6E6327XTSA1IR (Infineon Technologies) |
BGA8U1 - LTE / 3G LNAS |
Საწყობში: 370.370 |
||
RMPA0959Fairchild (ON Semiconductor) |
NARROW BAND HIGH POWER AMPLIFIER |
Საწყობში: 151.515 |
||
MAX2653EUA+Linear Technology (Analog Devices, Inc.) |
GSM900 LOW-NOISE AMPLIFIER |
Საწყობში: 44.354 |
||
BGM15MA12E6327XTSA1IR (Infineon Technologies) |
MID |
Საწყობში: 250.000 |
||
BGU8010,115NXP Semiconductors |
SIGE:C LOW NOISE AMPLIFIER MMIC |
Საწყობში: 333.333 |
||
MW7IC2240NBR1Freescale Semiconductor, Inc. (NXP Semiconductors) |
NARROW BAND HIGH POWER AMPLIFIER |
Საწყობში: 2.929 |
||
BGU8H1115NXP Semiconductors |
MMIC |
Საწყობში: 625.000 |
||
UPC8128TB-E3-ARenesas Electronics America |
WIDE BAND LOW POWER AMPLIFIER |
Საწყობში: 192.307 |
||
MAX2027EUP-DLinear Technology (Analog Devices, Inc.) |
VARIABLE-GAIN AMPLIFIER |
Საწყობში: 22.146 |
||
HMC375LP3ETRHittite (Analog Devices) |
NARROW BAND LOW POWER AMPLIFIER, |
Საწყობში: 28.368 |